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| PD- 93755 IRLML6402 HEXFET(R) Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching D VDSS = -20V G S RDS(on) = 0.065 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -3.7 -2.2 -22 1.3 0.8 0.01 11 12 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. 75 Max. 100 Units C/W www.irf.com 1 8/13/99 IRLML6402 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.40 6.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V V GS = 0V, ID = -250A -0.009 --- V/C Reference to 25C, ID = -1mA 0.050 0.065 VGS = -4.5V, ID = -3.7A 0.080 0.135 VGS = -2.5V, ID = -3.1A -0.55 -0.95 V V DS = VGS, ID = -250A --- --- S VDS = -10V, ID = -3.7A --- -1.0 VDS = -20V, VGS = 0V A --- -25 VDS = -20V, VGS = 0V, TJ = 70C --- -100 VGS = -12V nA --- 100 VGS = 12V 8.0 12 ID = -3.7A 1.2 1.8 nC VDS = -10V 2.8 4.2 VGS = -5.0V 350 --- VDD = -10V 48 --- ID = -3.7A ns 588 --- RG = 89 381 --- RD = 2.7 633 --- VGS = 0V 145 --- pF VDS = -10V 110 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 29 11 -1.3 A -22 -1.2 43 17 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.0A, VGS = 0V TJ = 25C, IF = -1.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25C, L = 1.65mH RG = 25, IAS = -3.7A. ** For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRLML6402 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP 10 -2.25V -2.25V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -3.7A TJ = 25 C R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 1.0 0.5 10 2.0 V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6402 1000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd 10 ID = -3.7A VDS =-10V 800 -VGS , Gate-to-Source Voltage (V) 8 C, Capacitance(pF) Ciss 600 6 400 4 200 Coss Crss 2 0 1 10 100 0 0 3 6 FOR TEST CIRCUIT SEE FIGURE 13 9 12 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) -ID , Drain Current (A) I 10us 10 100us 10 TJ = 150 C 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLML6402 4.0 25 EAS , Single Pulse Avalanche Energy (mJ) 20 -ID , Drain Current (A) 3.0 ID -1.7A -3.0A BOTTOM -3.7A TOP 15 2.0 10 1.0 5 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLML6402 R DS ( on ) , Drain-to-Source On Resistance ( ) 0.14 0.20 VGS = -2.5V 0.16 R DS(on) , Drain-to -Source Voltage ( ) 0.12 0.10 0.12 0.08 0.06 Id = -3.7A 0.08 VGS = -4.5V 0.04 0.04 0.02 2.0 3.0 4.0 5.0 6.0 7.0 0.00 0 5 10 15 20 25 30 -I D , Drain Current ( A ) -VGS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com IRLML6402 Package Outline Micro3TM TM Dimensions are shown in millimeters (inches) D -B3 IN C H E S M IN .03 2 .00 1 .01 5 .004 .105 MA X .04 4 .00 4 .02 1 .006 .120 M ILL IM ET E R S M IN 0.8 2 0.0 2 0.3 8 0 .10 2 .67 MAX 1 .11 0 .10 0 .54 0.15 3.05 L E A D A S S IG N M E N T S 1 - G A TE 2 - SO U R C E 3 - D R AIN H 2 0.20 ( .00 8 ) M AM D IM A A1 B C D e e1 3 E -A- 3 1 .07 50 BA S IC .03 75 BA S IC .04 7 .083 .00 5 0 .055 .098 .0 10 8 1.90 B A SIC 0.9 5 B AS IC 1.2 0 2 .10 0.1 3 0 1 .40 2.50 0 .25 8 e e1 0.008 (.0 03) L 3X C 3X E H L A -CB 3X 0.10 (.00 4) M A1 C AS B S M IN IM U M R E C O M ME N D E D FO O T PR IN T 0 .80 ( .031 ) 3X 0 .90 ( .0 35 ) 3X 2.00 ( .079 ) N OTES: 1 . D IM EN SIO N IN G & T O L E R A N C IN G P ER A N SI Y1 4.5M -1 982. 2 . C O N TR O LLIN G D IM E N S IO N : IN C H . 3 D IM EN SIO N S D O N O T IN C LU D E M O LD F LA SH . 0.95 ( .037 ) 2X Part Marking Information Micro3TM TM E XA M P L E : T H IS IS A N IR L M L 6 3 0 2 W O RK W EEK 01 02 03 04 YE A R 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K W ORK W EEK 27 28 29 30 W A B C D P AR T N U M B E R 1C Y = YE A R C O D E W = W EEK COD E YW DATE CO DE YEAR 2 001 2 002 2 003 1 994 1 995 1 996 1 997 1 998 1 999 2 000 Y 1 2 3 4 5 6 7 8 9 0 W A B C D TOP P A R T N U M B E R E X AM P L E S : 1 A = IR L M L 2 4 0 2 1 B = IR L M L 2 8 0 3 1 C = IR LM L 6 3 0 2 1 D = IR LM L 5 1 0 3 D A T E C O D E E X A M P LE S : YW W = 9 5 0 3 = 5 C YW W = 9 5 3 2 = E F 24 25 26 X Y Z 50 51 52 X Y Z W O R K W E E K = (1 -26 ) IF P R E C E D ED BY L AS T D IG IT O F C A LE N D E R YE A R W O R K W E E K = ( 2 7 -5 2 ) IF P R E C E D E D B Y L E TT E R www.irf.com 7 IRLML6402 Tape & Reel Information 2.0 5 ( .0 80 ) 1.9 5 ( .0 77 ) 4 .1 ( .161 ) 3 .9 ( .154 ) Micro3TM TM Dimensions are shown in millimeters (inches) 1 .6 ( .062 ) 1 .5 ( .060 ) 1 .32 ( .051 ) 1 .12 ( .045 ) 1.85 ( .07 2 ) 1.65 ( .06 5 ) TR 3.55 ( .13 9 ) 3.45 ( .13 6 ) 8 .3 ( .326 ) 7 .9 ( .312 ) F E E D D IR E C T IO N 4.1 ( .16 1 ) 3.9 ( .15 4 ) 1.1 ( .04 3 ) 0.9 ( .03 6 ) 0.35 ( .01 3 ) 0.25 ( .01 0 ) 1 78.0 0 ( 7.008 ) M AX . 9.90 ( .39 0 ) 8.40 ( .33 1 ) N O TES : 1 . C O N T R O L LIN G D IM E N S IO N : M ILLIM E T E R . 2 . O U T LIN E C O N F O R M S T O E IA -481 & E IA -5 41. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 8/99 8 www.irf.com |
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